Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect Transistors
نویسندگان
چکیده
منابع مشابه
Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS2 Heterojunctions
Recently, two-dimensional materials such as molybdenum disulphide (MoS2) have been demonstrated to realize field effect transistors (FET) with a large current on-off ratio. However, the carrier mobility in backgate MoS2 FET is rather low (typically 0.5-20 cm(2)/V · s). Here, we report a novel field-effect Schottky barrier transistors (FESBT) based on graphene-MoS2 heterojunction (GMH), where th...
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ژورنال
عنوان ژورنال: Nanomaterials
سال: 2020
ISSN: 2079-4991
DOI: 10.3390/nano10122346