Scaling and statistics of bottom-up synthesized armchair graphene nanoribbon transistors

Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich unprecedented quantum-related mesoscopic transport phenomena. However, it can be difficult to quantify correlations between geometrical or structural parameters obtained from advanced microscopy measured electrical characteristics when they are made into macroscopic devices. Here, we propose a strategy connect nanomaterial morphologies device performance through Monte Carlo model apply understand scaling trends bottom-up synthesized armchair graphene nanoribbon (GNR) transistors. A new nanofabrication process is developed GNR transistors with channel length down 7 nm. The impacts spatial distributions geometries on investigated systematically comparison experimental data model. Through this study, challenges opportunities transistor technologies based GNRs pinpointed, paving way further improvement future technology nodes.