Sb ₂ Te ₃ /MoS ₂ Van der Waals Junctions with High Thermal Stability and Low Contact Resistance

Two-dimensional transition metal dichalcogenides (TMDCs) demonstrate great potential in nanoelectronics devices owing to their high carrier mobility the atomically thin channel regime. However, contact resistance between source/drain electrodes and TMDC channels hinders TMDCs applications very-large-scale integration (VLSI) field. Here, this work reports aligned van der Waals (vdW) junction fabrications through thermal-induced crystallization of layered Sb2Te3 on monolayer MoS2 using VLSI-compatible physical vapor deposition annealing processes. Due Fermi-level unpinning with a small band offset density state Sb2Te3, better device performance is demonstrated MOSFETs Sb2Te3/W than that Sb/W contact. Moreover, ideal vdW junctions are found extreme high-thermal robustness. No intermixing at Sb2Te3/MoS2 interface or crystallinity degradation observed after 450 °C annealing, leading higher thermal stability its Sb counterpart. promising candidate as an n-type material for TMDC-based such MoS2, MoSe2, WS2 future VLSI electronics various other applications.