RTD/CMOS nanoelectronic circuits: thin-film InP-based resonant tunneling diodes integrated with CMOS circuits
نویسندگان
چکیده
منابع مشابه
Comparison of Bistable Circuits Based on Resonant-Tunneling Diodes
Using computer-aided circuit simulation, the speed of RTD-based bistable circuits has been evaluated in terms of device parameters, such as the transistor’s fT and fmax, and circuit parameters, such as sizing. Two topologies studied in this work are: 1) monostable-to-bistable transition logic element (MOBILE), and 2) quantum bistable logic circuit (QBL). The transistors studied in this paper ar...
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Compound semiconductor devices are commonly used in today’s wideband communications systems. In particular, they are indispensable to build the front-end stage, which is required to process high-frequency signals. Introduction of resonant-tunneling diodes (RTDs) to the front end would result in even better system performance. In the long term, such efforts are expected to pave the way for post-...
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We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resis...
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Preface This report is a summary of the activities in the field of resonant tunneling device circuit design. (GMUD) during the first year of the Microelectronics Advanced Research Initiative projects ANSWERS (Autonomous Nanoelectronic Systems with Extended Replication and Signalling) and LOCOM (Logic Circuits with Reduced Complexity based on Devices with Higher Functionality). As part of the AN...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 1999
ISSN: 0741-3106,1558-0563
DOI: 10.1109/55.748907