Room Temperature Phase Transition of W?Doped VO <sub>2</sub> by Atomic Layer Deposition on 200 mm Si Wafers and Flexible Substrates

نویسندگان

چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Effect of annealing treatments on CeO2 grown on TiN and Si substrates by atomic layer deposition

In this work, we investigate the effect of thermal treatment on CeO2 films fabricated by using atomic layer deposition (ALD) on titanium nitride (TiN) or on silicon (Si) substrates. In particular, we report on the structural, chemical and morphological properties of 25 nm thick ceria oxide with particular attention to the interface with the substrate. The annealing treatments have been performe...

متن کامل

Atomic Layer Deposition of HfO2 Thin Films on Si and GaAs Substrates

The atomic layer deposition of HfO2 thin films is studied on Si(100) and GaAs(100) surfaces. The films are grown using tetrakis(dimethyl)amino hafnium (TDMAH) and H2O precursors at a deposition temperature of 275°C. The Si surfaces used include a H-terminated surface and an OH-rich chemical oxide. GaAs substrates are subjected to two different predeposition treatments involving an HF and a NH4O...

متن کامل

Fabrication and Characteristics of Self-Aligned ZnO Nanotube and Nanorod Arrays on Si Substrates by Atomic Layer Deposition

Vertically self-aligned ZnO nanorods and nanotubes are fabricated on Si substrates by atomic layer deposition with the assistance of anodic aluminum oxide at 250°C. These nanostructures are equal in height, isolated, and vertical to the Si substrate. With 550 deposition cycles, we can fabricate regular arrays of ZnO nanorods with an average diameter of 70 nm and with a height of 470 nm. In part...

متن کامل

Atomic layer deposition of transition metals.

Atomic layer deposition (ALD) is a process for depositing highly uniform and conformal thin films by alternating exposures of a surface to vapours of two chemical reactants. ALD processes have been successfully demonstrated for many metal compounds, but for only very few pure metals. Here we demonstrate processes for the ALD of transition metals including copper, cobalt, iron and nickel. Homole...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Advanced Optical Materials

سال: 2022

ISSN: ['2195-1071']

DOI: https://doi.org/10.1002/adom.202201326