Review of amorphous silicon based particle detectors: the quest for single particle detection

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Topical Review for Semiconductor Science and Technology Review of Amorphous Silicon Based Particle Detectors: The Quest for Single Particle Detection

Hydrogenated amorphous silicon (a-Si:H) is attractive for radiation detectors because of its radiation resistance and processability over large areas and with mature Si microfabrication techniques. While the use of a-Si:H for medical imaging has been very successful, the development of detectors for particle tracking and minimum-ionizing-particle detection has lagged, with almost no practical i...

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Thin-film silicon detectors for particle detection

Integrated particle sensors have been developed using thin-film on ASIC technology. For this purpose, hydrogenated amorphous silicon diodes, in various configurations, have been optimized for particle detection. These devices were first deposited on glass substrates to optimize the material properties and the dark current of very thick diodes (with thickness up to 50 μm). Corresponding diodes w...

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Particle detectors 1 28 . PARTICLE DETECTORS

Revised 2003 (see the various sections for authors). In this section we give various parameters for common detector components. The quoted numbers are usually based on typical devices, and should be regarded only as rough approximations for new designs. More detailed discussions of detectors and their underlying physics can be found in books by Ferbel [1], Grupen [2], Kleinknecht [3], Knoll [4]...

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28 . Particle detectors 1 28 . PARTICLE DETECTORS

In this section we give various parameters for common detector components. The quoted numbers are usually based on typical devices, and should be regarded only as rough approximations for new designs. More detailed discussions of detectors and their underlying physics can be found in books by Ferbel [1], Grupen [2], Kleinknecht [3], Knoll [4], and Green [5]. In Table 28.1 are given typical reso...

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ژورنال

عنوان ژورنال: Semiconductor Science and Technology

سال: 2016

ISSN: 0268-1242,1361-6641

DOI: 10.1088/0268-1242/31/10/103005