Reverse voltage protection circuits for power MOSFETs in low dropout power applications

نویسندگان

چکیده

This paper proposed three reverse voltage protection circuits for the power MOSFETs in low dropout applications. Power devices are vulnerable to instantaneous current overshoot when input is lower than output voltage. Compared with conventional solutions using diode block, structures consume fewer drop during normal operation. The first design suitable applications wide ranges but requires largest die area. other two voltages, and characterized effective area arrangement dead-zone free control, respectively. require 126.2%, 12.25% 43.05% extra of devices,

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ژورنال

عنوان ژورنال: IEICE Electronics Express

سال: 2022

ISSN: ['1349-2543', '1349-9467']

DOI: https://doi.org/10.1587/elex.19.20220347