منابع مشابه
Nanoionics-based resistive switching memories.
Many metal-insulator-metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical...
متن کاملInvestigation of resistive switching in anodized titanium dioxide thin films
In this work, TiO2 nanostructures were grown on titanium thin films by electrochemical anodizing method. The bipolar resistive switching effect has been observed in Pt/TiO2/Ti device. Resistive switching characteristics indicated the TiO2 nanotubes are one of the potential materials for nonvolatile memory applications. Increasing anodizing duration will increase nanotube lengths which itself c...
متن کاملDegenerate Resistive Switching and Ultrahigh Density Storage in Resistive Memory
We show that, in tantalum oxide resistive memories, activation power provides a multi-level variable for information storage that can be set and read separately from the resistance. These two state variables (resistance and activation power) can be precisely controlled in two steps: (1) the possible activation power states are selected by partially reducing resistance, then (2) a subsequent par...
متن کاملInvestigating bipolar resistive switching characteristics in filament type and interface type BON-based resistive switching memory
Available online 17 September 2012
متن کاملSelf-Compliant Bipolar Resistive Switching in SiN-Based Resistive Switching Memory
Here, we present evidence of self-compliant and self-rectifying bipolar resistive switching behavior in Ni/SiNx/n⁺ Si and Ni/SiNx/n++ Si resistive-switching random access memory devices. The Ni/SiNx/n++ Si device's Si bottom electrode had a higher dopant concentration (As ion > 1019 cm-3) than the Ni/SiNx/n⁺ Si device; both unipolar and bipolar resistive switching behaviors were observed for th...
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ژورنال
عنوان ژورنال: Scholarpedia
سال: 2011
ISSN: 1941-6016
DOI: 10.4249/scholarpedia.11414