Research on the molecular scale material removal mechanism in chemical mechanical polishing

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چکیده

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Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling

The abrasion mechanism in solid-solid contact mode of the chemical mechanical polishing (CMP) process is investigated in detail. Based on assumptions of plastic contact over wafer-abrasive and pad-abrasive interfaces, the normal distribution of abrasive size and an assumed periodic roughness of pad surface, a novel model is developed for material removal in CMP. The basic model is = removed, wh...

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Wafer Scale Variation of Planarization Length in Chemical Mechanical Polishing

Chemical mechanical polishing (CMP) is widely used for pla-narization of advanced interconnect and shallow trench isolation structures in integrated circuit manufacture. Of particular concern is within-die variation in the interlevel dielectric or oxide thickness remaining after polish, due to pattern density variations across the die. 1 Recent modeling of CMP has shown that a " planarization l...

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A model for chemical–mechanical polishing of a material surface based on contact mechanics

A new contact-mechanics-based model for chemical–mechanical polishing is presented. According to this model, the local polish rate is controlled by the pressure distribution between features on the wafer and the polishing pad. The model uses an analysis based on the work by Greenwood to evaluate this pressure distribution taking into account pad compliance and roughness. Using the model, the e2...

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Material removal in the optical polishing of hydrophilic polymer materials

The optical polishing of hydrophilic polymer materials is a complex process that requires a comprehensive setting of various operating parameters. Based on a series of experimental investigations and dimensional analysis, this paper presents a simple empirical equation to evaluate material removal in the polishing of optical spherical surfaces of hydrophilic polymer materials. It is shown that ...

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ژورنال

عنوان ژورنال: Science Bulletin

سال: 2008

ISSN: 2095-9273,2095-9281

DOI: 10.1007/s11434-008-0268-7