Relative Magneto-current of Magnetic Tunnel Transistor with Amorphous n-type Si Film

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Improved drain current characteristics of tunnel field effect transistor with heterodielectric stacked structure

In this paper, we proposed a 2-D analytical model for electrical characteristics such as surface potential, electric field and drain current of Silicon-on-Insulator Tunnel Field Effect Transistor (SOI TFETs) with a SiO2/High-k stacked gate-oxide structure. By using superposition principle with suitable boundary conditions, the Poisson’s equation has been solved to model the channel r...

متن کامل

Amorphous Ta-Si-N thin-film alloys as diffusion barrier in AI/Si metallizations

Amorphous Ta-Si-N thin films of a wide range of compositions were prepared by r~ ~eactive sputtering of a Ta5Si3 target in a N2/ Ar plasma. The relatio~shi~ betwee~ films' compos1t10n an~ resistivity is reported. All obtained films were tested as dtffuston barners between ~1 and S1. Backscattering spectrometry combined with cross-sectional transmis_sion electron m1eroscopy were used to determin...

متن کامل

Gate Tunnel Current in an MOS Transistor

A theoretical description of gate tunnel current in an MOS transistor is proposed, and the results of calculations for the case of an n-channel MOSFET with extremely thin gate oxides are given. A comparison of the gate tunnel current with the drain current is made.

متن کامل

Tunnel spin polarization of Ni80Fe20/SiO2 probed with a magnetic tunnel transistor

The tunnel spin polarization of Ni80Fe20/SiO2 interfaces has been investigated using a magnetic tunnel transistor MTT . The MTT with a Ni80Fe20/SiO2 emitter shows a magnetocurrent of 74% at 100 K, corresponding to a tunnel spin polarization of the Ni80Fe20/SiO2 interface of 27%. This is only slightly lower than the value of 34% for Ni80Fe20/Al2O3 interfaces determined in similar MTT structures....

متن کامل

Thin-film amorphous silicon germanium solar cells with p- and n-type hydrogenated silicon oxide layers

Mixed-phase hydrogenated silicon oxide (SiOx:H) is applied to thin-film hydrogenated amorphous silicon germanium (a-SiGe:H) solar cells serving as both p-doped and n-doped layers. The bandgap of p-SiOx:H is adjusted to achieve a highly-transparent window layer while also providing a strong electric field. Bandgap grading of n-SiOx:H is designed to obtain a smooth transition of the energy band e...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Journal of Magnetics

سال: 2004

ISSN: 1226-1750

DOI: 10.4283/jmag.2004.9.1.023