Relationship between electrical and optical characterization of Ga-doped ZnO thin films deposited by magnetron sputtering

Introduction: Transparent conducting films have received much attention in energy conversion applications. To replace high-cost indium-tin-oxide (ITO), Ga-doped ZnO (GZO) film is considered due to its high conductivity, good transparency, low cost, and toxicity. Methods: GZO pure were deposited on glass substrates by dc magnetron sputtering. The crystalline structure of the samples was verified using X-ray diffraction. In particular, relationship between electrical optical characterization investigated through plasma wavelength obtained from transmittance reflectance spectra. Meanwhile, carrier transport directly confirmed Hall effect-based measurements. Results: shows a hexagonal wurtzite structure, with successful incorporation Ga into lattice. doping increases concentration, leading decrease resistivity film. This study also discusses correlation measurements spectroscopies. Here, we extracted concentration mobility compared them data. Conclusion: dependence ionized impurity scattering can be pointed out. It proposes an effective way qualitatively predict characteristics properties thin via analysis.