Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes inp-(Ga,Mn)As epilayers
نویسندگان
چکیده
منابع مشابه
Determination of the local concentrations of Mn interstitials and antisite defects in GaMnAs.
We present a method for the determination of the local concentrations of interstitial and substitutional Mn atoms and As antisite defects in GaMnAs. The method relies on the sensitivity of the structure factors of weak reflections to the concentrations and locations of these minority constituents. High spatial resolution is obtained by combining structure factor measurement and x-ray analysis i...
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Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with 100 cubic anisotropy. A change in the magnetic easy axis from [100] ...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2003
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.1559426