Reduction of threading dislocation density in Ge/Si using a heavily As-doped Ge seed layer
نویسندگان
چکیده
منابع مشابه
Threading dislocation reduction in strained layers
In this article, we have developed models for threading dislocation ~TD! reduction due to the introduction of an intentionally strained layer. Three different types of dislocations have been considered in this model: misfit dislocations ~MDs!, mobile TDs, and TDs whose glide motion has been blocked by a MD crossing the glide path of the TD ~immobile TDs!. The models are based on MD formation by...
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The geometry of threading dislocations (TDs), non-equilibrium defects that are generated as a r e sult of stress relaxation in thin films, is considered in order to provide a basis for their reduction behavior during heteroepitaxial growth. This paper, the first of a two-part series, discusses the geometric possibility for reactions between TDs as a result of film growth. It is demonstrated tha...
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In this work, a model is developed to treat threading dislocation (TD) reduction in (0 0 0 1) wurtzite epitaxial GaN thin films. The model is based on an approach originally proposed for (0 0 1) FCC thin film growth and uses the concepts of mutual TD motion and reactions. We show that the experimentally observed slow TD reduction in GaN can be explained by low TD reaction probabilities due to T...
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Available online 21 October 2009
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ژورنال
عنوان ژورنال: AIP Advances
سال: 2016
ISSN: 2158-3226
DOI: 10.1063/1.4943218