Reduction of surface defect with silicon-molecular beam epitaxy.

Defect reduction with quantum dots in GaN grown on sapphire substrates by molecular beam epitaxy

Segregation and trapping of erbium during silicon molecular beam epitaxy

Erbium surface segregation is observed during growth of Er-doped Si by molecular beam epitaxy on Si~100! at 600 °C. Once a critical Er surface areal density of 2310 Er/cm is reached, enhanced Er trapping is observed, possibly due to the formation of silicide precipitates. Er segregation on Si~100! is fully avoided when growth is performed in an oxygen background pressure of ; 10 mbar, due to th...

Hydration and Reduction of Molecular Beam Epitaxy Grown VO

Additional resources and features associated with this article are available within the HTML version: • Supporting Information • Access to high resolution figures • Links to articles and content related to this article • Copyright permission to reproduce figures and/or text from this article Supported vanadium oxides processed under ambient environments have been studied by using X-ray standing...

Surface Morphology of GaN Surfaces during Molecular Beam Epitaxy

The reconstruction and surface morphology of gallium nitride (0001) and (000 ) surfaces are studied using scanning probe microscopy and reflection high-energy electron diffraction. Results for bare GaN surfaces are summarized, and changes in the surface structure and morphology due to co-deposition of indium or magnesium during growth are discussed.

Kinetic Surface Roughening and Pattern Formation in Molecular Beam Epitaxy