منابع مشابه
The Foundations of the EKV MOS Transistor Charge-Based Model
This paper presents the foundations that lead to the EKV MOS transistor compact model. It describes all the basic concepts required to derive the large-signal and smallsignal charge-based model that is valid in all modes of inversion, from weak to strong inversion through moderate inversion. The general small-signal model valid in quasistatic and non-quasi-static operation is also presented and...
متن کاملA mutation in GJB3 is associated with recessive erythrokeratodermia variabilis (EKV) and leads to defective trafficking of the connexin 31 protein.
Erythrokeratodermia variabilis (EKV) is a skin disorder characterized by variable (transient) erythemas and fixed keratosis. The disorder maps to chromosome 1p34-35, a location that contains the GJB3 gene encoding the gap junction protein connexin 31. Until now, only heterozygote mutations in the form of dominant inheritance have been described in this gene associated with EKV. We report here a...
متن کاملApplication of the EKV model to the DTMOS SOI transistor
−The EKV model, a continuous model for the MOS transistor, has been adapted to both partially depleted SOI MOSFETs with grounded body (GBSOI) and dynamic threshold MOS (DTMOS) transistors. Adaptation is straightforward and helps to understand the physics of the DTMOS. Excellent agreement is found between the model and the measured characteristics of GBSOI and DTMOS devices Index Terms− Silicon-...
متن کاملAn Efficient Parameter Extraction Methodology for the EKV MOST Model
This paper presents a new parameter extraction methodology, based on an accurate and continuous MOS model dedicated to low-voltage and low-current analog circuit design and simulation (EKV MOST Model). The extraction procedure provides the key parameters from the pinch-off versus gate voltage characteristic, measured at constant current from a device biased in moderate inversion. Unique paramet...
متن کاملMosfet Simulation Using Matlab Implementation of the Ekv Model
The paper presents an implementation of EKV MOST model in Matlab environment. Parameter extraction and fitting procedures are briefly sketched.Open source modules for transistor characteristics and additional functions for parameter extraction and fitting are included in a Matlab toolbox. Model parameters are user defined to provide flexibility of design process.The accuracy of simulation resul...
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ژورنال
عنوان ژورنال: Journal of Investigative Dermatology
سال: 2005
ISSN: 0022-202X
DOI: 10.1111/j.0022-202x.2004.23577.x