Recent Advances in Flexible Resistive Random Access Memory
نویسندگان
چکیده
Flexible electronic devices have received great attention in the fields of foldable devices, wearable displays, actuators, synaptic bionics and so on. Among them, high-performance flexible memory for information storage processing is an important part. Due to its simple structure non-volatile characteristics, resistive random access (RRAM) most likely achieve full commercialization. At present, minimum bending radius RRAM can reach 2 mm maximum ON/OFF ratio (storage window) 108. However, there are some defects reliability durability. In process, cracks main cause device failure. The charge trap sites provided by appropriate doping or use amorphous nanostructures make conductive filaments steadier. electrodes with high conductivity dielectric stable properties development directions materials future.
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ژورنال
عنوان ژورنال: Applied system innovation
سال: 2022
ISSN: ['2571-5577']
DOI: https://doi.org/10.3390/asi5050091