Radiative lifetime of free excitons in hexagonal boron nitride

نویسندگان

چکیده

In a previous PRL, the authors found quantitative evidence that, despite hexagonal boron nitride ($h$-BN) having an indirect band gap, luminescence efficiency of high-quality crystals reaches level best direct semiconductors. Here, thanks to breakthrough experiments performed using original time-resolved cathodoluminescence setup, address root cause high quantum yield efficiency. These results should have practical application for use $h$-BN in 2D materials based optoelectronic devices.

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ژورنال

عنوان ژورنال: Physical review

سال: 2021

ISSN: ['0556-2813', '1538-4497', '1089-490X']

DOI: https://doi.org/10.1103/physrevb.104.l161203