Radiation-induced defect accumulation and annealing in Si-implanted gallium oxide

Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates

A combination of high-resolution X-ray diffractometry, Rutherford back scattering spectroscopy and secondary-ion mass spectrometry (SIMS) methods were used to characterize structural transformations of the damaged layer in Si(001) substrates heavily doped by Zn ions after a multistage thermal treatment. The shape of the SIMS profiles for Zn atoms correlates with the crystal structure of the dam...

Defects production and annealing in self-implanted Si

230-keV 28Si ions were implantated into Si( 100) at room temperature with doses from 1014 to 101*/cm2. The samples were analyzed by x-ray double crystal diffractometry and 2-MeV 4He ion channeling spectrometry. The implanted layer has a parallel lattice spacing equal to that of the unimplanted substrate. The perpendicular lattice spacing is larger than that of the unimplanted substrate and is p...

Gallium Oxide And Gadolinium Gallium Oxide Insulators On Si δ-Doped GaAs / AlGaAs Heterostructures

Study of Extended Defect Structure Induced by Pulsed Laser Annealing in Implanted Silicon Crystals

An analysis of extended defects generated during annealing by pulsed excimer laser radiation in silicon crystals implanted with Ge ions is presented. The investigation was performed by means of two complementary methods: the interference-polarizing microscopy and the Lang X-ray transmission topography. The existence of extended defects was revealed. It has been stated that the distribution of t...

LATTICE SITES AND DAMAGE ANNEALING OF IMPLANTED Tm AND Er IN Si

We have studied the lattice sites of Er in CZ Si single crystals by using conversion electron emission channeling from the isotope Er (2.28 s) which is the decay product of radioactive Tm (9.25 d). Following 60 keV implantation of Tm at a dose of 4×10 cm and annealing at 600°C, more than 90% of Er is found close to tetrahedral insterstitial (T) sites. The tetrahedral fraction of Er decreases co...