Quasi-free-standing monolayer and bilayer graphene growth on homoepitaxial on-axis 4H-SiC(0 0 0 1) layers

نویسندگان
چکیده

برای دانلود رایگان متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

High thermal stability quasi-free-standing bilayer graphene formed on 4H-SiC(0 0 0 1) via platinum intercalation

Influences on electronic structure induced by platinum (Pt) deposited on monolayer graphene grown on SiC(0001) are investigated by photoelectron spectroscopy (PES), selected area low energy electron diffraction (l-LEED) and angle resolved photoelectron spectroscopy (ARPES) techniques at the MAX Laboratory. Stable monolayer graphene electronic properties are observed after Pt deposition and afte...

متن کامل

Synthesis of quasi-free-standing bilayer graphene nanoribbons on SiC surfaces

Scaling graphene down to nanoribbons is a promising route for the implementation of this material into devices. Quantum confinement of charge carriers in such nanostructures, combined with the electric field-induced break of symmetry in AB-stacked bilayer graphene, leads to a band gap wider than that obtained solely by this symmetry breaking. Consequently, the possibility of fabricating AB-stac...

متن کامل

بررسی‌های ساختاری و مغناطیسی نانوذرات‌ پروسکایت LaMn1-xCoxO3 (0/1، 75/0، 5/0، 25/0، 0/0 = x)

In this work, the structural and magnetic properties of LaMn1-xCoxO3 (x = 0.00, 0.25, 0.50, 0.75, 1.00) are investigated. The structural characterization of compounds by X-ray powder diffraction is evidence for a rhombohedral structure (R -3c space group). Much less increase of the unit cell volume suggests that Co enters in lattice as Co+2 for x ≤ 0.5 while much more decrease of the unit cell ...

متن کامل

Surface Evolution of Nano-Textured 4H–SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth

Nano-textured 4H-SiC homoepitaxial layers (NSiCLs) were grown on 4H-SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were abou...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Carbon

سال: 2015

ISSN: 0008-6223

DOI: 10.1016/j.carbon.2014.10.010