منابع مشابه
Complex Nanostructures by Pulsed Droplet Epitaxy
What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the nanostructure. An often overlooked parameter, which has a...
متن کاملFabrication of GaAs Quantum Dots by Modified Droplet Epitaxy
We propose a modified droplet epitaxy method for fabricating self-organized GaAs/AlGaAs quantum dots (QDs) with a high As flux irradiation and a low substrate temperature. By our novel method, GaAs QDs were successfully formed, retaining their pyramidal shape, original base size and density of droplets, and preventing layer-by-layer growth. Quantum size effects of the QDs were distinctly observ...
متن کاملErratum to: Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
Open Access This article is distributed under the terms of the Creative Commons Attribution Noncommercial License which permits any noncommercial use, distribution, and reproduction in any medium, provided the original author(s) and source are credited.
متن کاملMorphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy
Fabrication of advanced artificial nanomaterials is a long-term pursuit to fulfill the promises of nanomaterials and it is of utter importance to manipulate materials at nanoscale to meet urgent demands of nanostructures with designed properties. Herein, we demonstrate the morphological tailoring of self-assembled nanostructures on faceted GaAs nanowires (NWs). The NWs are deposited on differen...
متن کاملPhotoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy
We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature ≤350°C, thus resulting in a low thermal budget procedure compatible with back-end integratio...
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ژورنال
عنوان ژورنال: Engineering Journal
سال: 2009
ISSN: 0125-8281
DOI: 10.4186/ej.2009.13.1.51