QUANTUM LIMIT CYCLOTRON RESONANCE IN GaAs AND Ge

Cyclotron resonance in ultra-low-hole-density narrow p-type GaAs/„Al,Ga...As quantum wells

Terahertz wide range tunable cyclotron resonance p-Ge laser

We present a Terahertz (THz) p-Ge laser operating in a cyclotron resonance (CR) mode. Thanks to the use of the optimum crystallographic orientation of p-Ge with respect to crossed E B fields, the laser line frequency is continuously tunable in the range 1.2-2.8 THz (40-90 cm) with the linewidth being 6 GHz (0.2 cm). We also show that due to such a wide CR radiation range, the laser can serve as...

Theory of spin-split cyclotron resonance in the extreme quantum limit.

We present an interpretation of recent cyclotron resonance experiments on the two-dimensional electron gas in GaAs/AlGaAs heterostructures. We show that the observed dependence of the resonance spectrum on Landau level occupancy and temperature arises from the interplay of three factors: spin-splitting of the cyclotron frequency; thermal population of the two spin states; and coupling of the re...

Interface-induced topological insulator transition in GaAs/Ge/GaAs quantum wells.

We demonstrate theoretically that interface engineering can drive germanium, one of the most commonly used semiconductors, into a topological insulating phase. Utilizing giant electric fields generated by charge accumulation at GaAs/Ge/GaAs opposite semiconductor interfaces and band folding, the new design can reduce the sizable gap in Ge and induce large spin-orbit interaction, which leads to ...

Combined Exciton-Cyclotron Resonance in Quantum Well Structures