Quantum-dot cascade laser: proposal for an ultralow-threshold semiconductor laser
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چکیده
منابع مشابه
Quantum-Dot Cascade Laser: Proposal for an Ultralow-Threshold Semiconductor Laser
We propose a quantum-dot version of the quantumwell cascade laser of Faist et al. The elimination of single phonon decays by the three-dimensional confinement implies a several order-of-magnitude reduction in the threshold current. The requirements on dot size (10–20 nm) and on dot density and uniformity [one coupled pair of dots per (200 nm3) with 5% nonuniformity] are close to current technol...
متن کاملSCHOLA GENEVENSIS MDLIX Quantum-Dot Cascade Laser: Proposal for an Ultra-Low-Threshold Semiconductor Laser
We propose a quantum-dot version of the quantum-well cascade laser of Faist et al. [Science 264, 553 (1994)]. The elimination of single phonon decays by the three-dimensional confinement implies a several-order-of-magnitude reduction in the threshold current. The requirements on dot size (10-20nm) and on dot density and uniformity [one coupled pair of dots per (180nm) with 5% nonuniformity] are...
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UNLABELLED We demonstrated an unambiguous quantum dot cascade laser based on InGaAs/GaAs/InAs/InAlAs heterostructure by making use of self-assembled quantum dots in the Stranski-Krastanow growth mode and two-step strain compensation active region design. The prototype generates stimulated emission at λ ~ 6.15 μm and a broad electroluminescence band with full width at half maximum over 3 μm. The...
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Different approaches to the design of a genuinely temperature-insensitive quantum dot (QD) laser are proposed. Suppression of the parasitic recombination outside the QDs, which is the dominant source of the temperature dependence of the threshold current in the conventional design of a QD laser, is accomplished either by tunneling injection of carriers into the QDs or by band-gap engineering. E...
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ژورنال
عنوان ژورنال: IEEE Journal of Quantum Electronics
سال: 1997
ISSN: 0018-9197
DOI: 10.1109/3.594880