Pressure-induced electronic topological transition in Sb2S3
نویسندگان
چکیده
منابع مشابه
Pressure-induced electronic topological transition in Sb2S3.
We report the high-pressure vibrational properties and a pressure-induced electronic topological transition in the wide bandgap semiconductor Sb2S3 (E g = 1.7-1.8 eV) using Raman spectroscopy, resistivity and x-ray diffraction (XRD) studies. In this report, high-pressure Raman spectroscopy and resistivity studies of Sb2S3 have been carried out to 22 GPa and 11 GPa, respectively. We observed t...
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ژورنال
عنوان ژورنال: Journal of Physics: Condensed Matter
سال: 2015
ISSN: 0953-8984,1361-648X
DOI: 10.1088/0953-8984/28/1/015602