Preparation of Iron Oxide Thin Films by MOCVD
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چکیده
منابع مشابه
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Molybdenum thin films with 50 and 150 nm thicknesses were deposited on silicon substrates, using DC magnetron sputtering system, then post-annealed at different temperatures (200, 325, 450, 575 and 700°C) with flow oxygen at 200 sccm (standard Cubic centimeter per minute). The crystallographic structure of the films was obtained by means of x-ray diffraction (XRD) analysis. An atomic force micr...
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ژورنال
عنوان ژورنال: Journal of the Ceramic Society of Japan
سال: 1996
ISSN: 0914-5400,1882-1022
DOI: 10.2109/jcersj.104.949