Preparation of High-Thickness n−-Ga2O3 Film by MOCVD

The homoepitaxial Si-doped Ga2O3 film prepared by metal–organic chemical vapor deposition (MOCVD) was reported in this paper. thickness reached 4.5 microns, a relatively high value for MOCVD. full width at half maxima of the (002) diffraction plane 26.3 arcsec, thus showing crystalline quality. showed n−-type properties with doping concentration 3.6 × 1016 cm−3 and electron mobility 137 cm2/V·s. In addition, element composition stress state were characterized analyzed. This indicates that MOCVD, supporting high-quality, high-precision epitaxy, is promising power devices.