Preferred growth direction of III–V nanowires on differently oriented Si substrates
نویسندگان
چکیده
منابع مشابه
InAs-mediated growth of vertical InSb nanowires on Si substrates
In this work, InSb nanowires are grown vertically on Si (111) with metal organic chemical vapor deposition using InAs as seed layer, instead of external metal catalyst. Two groups of InSb nanowires are fabricated and characterized: one group presents Indium droplets at the nanowire's free end, while the other, in contrast, ends without Indium droplet but with pyramid-shaped InSb. The indium-dro...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2020
ISSN: 0957-4484,1361-6528
DOI: 10.1088/1361-6528/abafd7