Predictive gate ageing-laws of SiC MOSFET under repetitive short-circuit stress

This paper proposes SiC MOSFET gate ageing-laws under repetitive short-circuit stress. Based on analytical studies, physical forms and preconditioning data, numerical fitting based stress variables ΔTj, TPulse Gate Damage % Esc is proposed. Accuracy prediction capabilities of have been evaluated compared. Resulting in suggesting a new ageing-law ΔTAl_Top metal-source. one gives the best accuracy. Finally, directly energy appears to capability.