Postgrowth Shaping and Transport Anisotropy in Two-Dimensional InAs Nanofins

We report on the post-growth shaping of free-standing 2D InAs nanofins that are grown by selective-area epitaxy and mechanically transferred to a separate substrate for device fabrication. use citric acid based wet etch enables complex shapes, e.g., van der Pauw cloverleaf structures, with patterning resolution down 150 nm as well partial thinning nanofin improve gate response. exploit high sensitivity structures transport anisotropy address fundamental question whether there is measurable arising from wurtzite/zincblende polytypism in nanostructures. demonstrate mobility order 2-4 at room temperature polytypic stacking faults our nanofins. Our work highlights key materials consideration devices featuring self-assembled III-V nanostructures using advanced methods.