Polyvinyl-tris(trimethylsiloxy) silane

[Silane coupling agents].

Trimeth­yl(triphenyl­meth­oxy)silane

In the title mol-ecule, C(22)H(24)OSi, the Si-O-C angle is 139.79 (11)°, the O-C-C angles of the triphenyl-meth-oxy group are in the range 106.13 (13)-109.22 (14)° and the O-Si-C angles of the trimethyl-sil-yloxy group are in the range 103.08 (10)-113.53 (10)°. In the crystal, face-to-face π-π interactions are observed between the phenyl rings [centroid separation = 4.194 (1) Å, interplanar spa...

Tetra­kis(4-tert-butyl­benz­yl)silane

The title compound, C(44)H(60)Si, was prepared as an inter-nal standard for diffusion-ordered NMR spectroscopy. The Si atom lies on a special position with site symmetry.

Pressure-induced metallization of silane.

There is a great interest in electronic transitions in hydrogen-rich materials under extreme conditions. It has been recently suggested that the group IVa hydrides such as methane (CH(4)), silane (SiH(4)), and germane (GeH(4)) become metallic at far lower pressures than pure hydrogen at equivalent densities because the hydrogen is chemically compressed in group IVa hydride compounds. Here we re...

Boron Autodoping during Silane Epitaxy

In order to calculate the redis tr ibut ion of boron in silicon by both diffusion and autodoping dur ing epitaxial growth, certain materials parameters must be known as a function of temperature. The parameters are the diffusion coefficient of boron, the evaporat ion coefficient of boron from silicon, and the silicon evaporation rate in a hydrogen ambient. The value of the diffusion coefficient...