منابع مشابه
Polyacetylene thin film photovoltaic devices
2014 Photovoltaic devices have been obtained by a direct polymerization of undoped (or p-type doped) thin film (CH)x layer onto a polycrystalline cadmium sulfide film. The morphology of the contact is observed by S.E.M. microscopy. The electrical characteristics of this device are studied in the dark or under illumination. The main result, at AM1, 100 mW/cm2 with doped (CH)x correspond to 0.5 p...
متن کاملPlasmonics for Improved Photovoltaic Devices
Several approaches have been adopted in the past for increasing the light absorption in photovoltaic solar cells. The introduction of a plasmonic layer of Ib metal nanoparticles (pure or embedded in a dielectric layer) has been recognized as a viable alternate approach for enhancing light absorption. The scattering from metal nanoparticles near their localized plasmon resonance seemed to be a p...
متن کاملPlasmonics for improved photovoltaic devices.
The emerging field of plasmonics has yielded methods for guiding and localizing light at the nanoscale, well below the scale of the wavelength of light in free space. Now plasmonics researchers are turning their attention to photovoltaics, where design approaches based on plasmonics can be used to improve absorption in photovoltaic devices, permitting a considerable reduction in the physical th...
متن کاملReticulated heterojunctions for photovoltaic devices.
Herein we present a molecular self-assembly process on the surface of transparent electrodes that yields a new type of organic semiconductor device structure: the donor deposits as supramolecular cables, and the acceptor subsequently infiltrates this network. This process results in a donor–acceptor interface that is interwoven at the nanoscale. When incorporated into photovoltaic devices, such...
متن کاملOptimizing Polymeric Field-Effect Devices
Field-effect devices were fabricated with poly(3,4-ethylenedioxy-thiophene)/poly(4-styrenesulfonate) (PEDOT/PSS) as the active material. Normally in a conductive “on” state, these transistor-like devices switch to a less conductive “off” state at an applied gate voltage in < 1 second; a switch back to the “on” state requires considerable more time (1 min. – 1 hr.). The physical model for these ...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Materials Today
سال: 2000
ISSN: 1369-7021
DOI: 10.1016/s1369-7021(00)80039-5