Polygonal pits on silicon surfaces that are created by laser-assisted chemical etching
نویسندگان
چکیده
منابع مشابه
Fabrication and Optical Characterization of Silicon Nanostructure Arrays by Laser Interference Lithography and Metal-Assisted Chemical Etching
In this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. In order to define silicon nanostructures, Metal-assisted chemical etching (MaCE) was carried out with silver catalyst. Provided solution (or materiel) in combination with laser interference lithogr...
متن کاملfabrication and optical characterization of silicon nanostructure arrays by laser interference lithography and metal-assisted chemical etching
in this paper metal-assisted chemical etching has been applied to pattern porous silicon regions and silicon nanohole arrays in submicron period simply by using positive photoresist as a mask layer. in order to define silicon nanostructures, metal-assisted chemical etching (mace) was carried out with silver catalyst. provided solution (or materiel) in combination with laser interference lithogr...
متن کاملHierarchical silicon nanostructured arrays via metal-assisted chemical etching
Department of Physics and Materials Scien Chee Avenue, Kowloon Tong, Kowloon, Hon Department of Biology and Chemistry, Cit Avenue, Kowloon Tong, Kowloon, Hong Kon Centre for Functional Photonics (CFP), Cit Avenue, Kowloon Tong, Kowloon, Hong Kon Shenzhen Research Institute, City Universit † Electronic supplementary informa 10.1039/c4ra06172a ‡ These authors contributed equally to th Cite this: ...
متن کاملMetal-assisted chemical etching in HFÕH2O2 produces porous silicon
A simple and effective method is presented for producing light-emitting porous silicon ~PSi!. A thin (d,10 nm! layer of Au, Pt, or Au/Pd is deposited on the ~100! Si surface prior to immersion in a solution of HF and H2O2 . Depending on the type of metal deposited and Si doping type and doping level, PSi with different morphologies and light-emitting properties is produced. PSi production occur...
متن کاملCraters on silicon surfaces created by gas cluster ion impacts
Atomic force microscopy ~AFM! and high-resolution transmission electron microscope ~HRTEM! cross section imaging of individual gas cluster ion impact craters on Si~100! and Si~111! substrate surfaces is examined. The comparison between 3 and 24 kV cluster impacts from Ar and O2 gas sources is shown. Results for low fluence (10 ions/cm) 24 kV Ar individual cluster impacts onto a Si~100! and Si~1...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: AIP Advances
سال: 2017
ISSN: 2158-3226
DOI: 10.1063/1.4973980