منابع مشابه
Plasmonic superlensing in doped GaAs.
We demonstrate a semiconductor based broadband near-field superlens in the mid-infrared regime. Here, the Drude response of a highly doped n-GaAs layer induces a resonant enhancement of evanescent waves accompanied by a significantly improved spatial resolution at radiation wavelengths around λ = 20 μm, adjustable by changing the doping concentration. In our experiments, gold stripes below the ...
متن کاملPlasmonic Ge-doped ZnO nanocrystals.
We present the first colloidal synthesis of Ge-doped ZnO nanocrystals, which are produced by a scalable method that uses only air and moisture stable precursors. The incorporation of tetravalent Ge ions within ZnO nanocrystals generates a surface plasmon resonance in the near-mid infrared, and induces a change in morphology, from isotropic spheroidal nanocrystals to rod-like, elongated structur...
متن کاملPrecipitation of Arsenic in Doped GaAs
Precipitation processes in the p-type, n-type, and intrinsic GaAs layers grown by molecular beam epitaxy at a low tempera ture were studied by transmission electron microscopy. The average spacing, average diameter, and volume fraction of precipitates were measured as a function of the annealing time for the annealing tempera ture of 700~ Volume fractions of precipitates are nearly constant in ...
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We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.
متن کاملA photoluminescence study of δ-doped GaAs
Samples of GaAs 8-doped with beryllium have been studied with photoluminescence. With a lightly doped sample, (2 x 1016 Be atoms per m2) a spectral feature is observed which can be interpreted as caused by radiative recombinations between spatially non-confined conductionband electrons and acceptor-related holes forming a miniband system confined spatially to the &doped region. With higher dens...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2015
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl503996q