Plasma-Enhanced Chemical Vapor Deposition of Indene for Gas Separation Membrane
نویسندگان
چکیده
منابع مشابه
Determination of Optical Properties in Germanium Carbon Coatings Deposited by Plasma Enhanced Chemical Vapor Deposition
In this research, Germanium-carbon coatings were deposited on ZnS substrates by plasma enhanced chemical vapor deposition (PECVD) using GeH4 and CH4 precursors. Optical parameters of the Ge1-xCx coating such as refractive index, Absorption coefficient, extinction coefficient and band gap were measured by the Swanepoel method based on the transmittance spectrum. The results showed that the refra...
متن کاملSystem Identification Methods for Plasma Enhanced Chemical Vapor Deposition
The introduction of new in situ sensing creates the possibility of directly controlling critical process variables in plasma enhanced chemical vapor deposition systems (PECVD). The complexity of this process makes it necessary to develop empirical models of the system dynamics. This paper describes the experimental and numerical procedures for identifying both transfer function and recurrent ne...
متن کاملPlasma-enhanced chemical vapor deposition of nanocrystalline diamond
Nanocrystalline diamond films have attracted considerable attention because they have a low coefficient of friction and a low electron emission threshold voltage. In this paper, the author reviews the plasma-enhanced chemical vapor deposition (PE-CVD) of nanocrystalline diamond and mainly focuses on the growth of nanocrystalline diamond by low-pressure PE-CVD. Nanocrystalline diamond particles ...
متن کاملGallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.
Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The cry...
متن کاملPlasma-enhanced chemical vapor deposition of intrinsic microcrystalline silicon from chlorine-containing source gas
Microcrystalline silicon (μc-Si:H) of truly intrinsic character can be deposited by plasmaenhanced chemical vapor deposition (PECVD) when dichlorosilane (SiH2Cl2) is added to the SiH4-H2 source gas. A dark-conductivity of 5·10 -8 S/cm, activation energy of 0.62 eV and photoconductivity of 1·10 S/cm are obtained. The optical bandgap for this material is approximately 1.1 eV. No special gas purif...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: ASEAN Journal of Chemical Engineering
سال: 2019
ISSN: 2655-5409,1655-4418
DOI: 10.22146/ajche.50874