Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications

SiN deposition at low temperatures using the plasma-enhanced atomic layer (PEALD) process is gaining momentum. A high-quality deposited a lower thermal budget and wet etch rates are desired for front-end-of-line applications in semiconductor industries. In this study, of PEALD investigated by utilizing highly reactive trisilylamine silicon precursor three different reaction partners nitrogen precursor. The quality layers compared with reference standard, low-pressure chemical vapor layers. properties interpreted FTIR XPS material characterization techniques. Furthermore, as-deposited annealed investigated. Finally, conformality assessed trench horizontal high aspect ratio structures.