Plasma Enhanced Atomic Layer Deposition of Ruthenium Films Using Ru(EtCp)2 Precursor

Ruthenium thin films were deposited by plasma-enhanced atomic layer deposition (PEALD) technology using Ru(EtCp)2 and oxygen plasma on the modified surface of silicon SiO2/Si substrates. The crystal structure, chemical composition, morphology characterized grazing incidence XRD (GXRD), secondary ion mass spectrometry (SIMS), force microscopy (AFM) techniques, respectively. It was found that mechanism film growth depends crucially substrate temperature. GXRD SIMS analysis show at temperature T = 375 °C, an abrupt change in reaction mechanisms occurs, leading to changing composition from RuO2 low temperatures pure Ru higher temperatures. confirmed electrical resistivity measurements for Ru-based films. Mechanical stress also analyzed, it suggested this factor increases roughness growing lowest ~1.5 nm achieved with a thickness 29 SiO2/Si-substrate °C. measured is 18–19 µOhm·cm (as deposited).