Piezoresistive Thermal Characteristics of Aluminum-Doped P-Type 3C-Silicon Carbides

This study examined the temperature-related piezoresistance issues of p-type doped 3C-silicon carbide (3C-SiC) materials. Previously, we proposed temperature models that describe phenomena based on ionization energies materials oriented for high-temperature operations. aimed to determine energy as a function aluminum doping concentration 3C-SiC. However, at low-temperature region drastic decrease in piezoresistive coefficient was observed, and it predicted occur when possessing large impurity are used under negative thermal strained conditions. phenomenon is contrast conventional factor P(N,T) narrow band-gap such silicon or germanium; thus, provides new insights into phenomena.