منابع مشابه
Fully Depleted SOI MOSFETs for DRAM
SOI technology has received high attention for the future high density DRAM applications. The two major requirements in any DRAM technology are long retention time and high charging efficiency. This paper discusses the disadvantages of using bulk silicon and Partially Depleted SOI devices in these terms. It is shown that a DRAM cell built with fully depleted SOI MOSFETs can store data for a lon...
متن کاملCharacterization of Variability in Deeply-Scaled Fully Depleted SOI Devices
Scaling of CMOS technology into the deep submicron regime gives rise to process variability, which in turn compromises circuit yield. One of the main sources of variability is random dopant fluctuation (RDF) in the channel. Fully Depleted Silicon on Insulator technology has been proposed as a promising alternative to bulk CMOS, due to it’s undoped channel which reduces RDF, as well as due to it...
متن کاملDesign of an Embedded Fully-Depleted SOI SRAM
We describe the design of an embedded 128-Kb Silicon-OnInsulator (SOI) CMOS SRAM, which is integrated alongside an array of pitch-matched processing elements to provide massively-parallel data processing within one integrated circuit. An experimental 0.25m fully-depleted SOI process was used. The design and layout of the SOI memory core and results from calibrated circuit simulations are presen...
متن کاملOptimal Design of Channel Doping for Fully Depleted SOI MOSFETs
Fully-depleted SOI devices are being considered for low power applications due to their threshold voltage, sub-threshold slope and capacitance advantages over other technologies. However, the threshold voltage of a fully-depleted SOI device is a strong function of the silicon film and sacrificial oxide thicknesses. Thus, to fully realize the advantages of fully-depleted SOI devices in commercia...
متن کاملFully-depleted Ge interband tunnel transistor: Modeling and junction formation
Complementary fully-depleted Ge interband-tunneling field-effect transistors (TFETs) and static inverters are modeled to quantify TFET performance relative to Si MOSFETs. SYNOPSYS TCAD is used to compute the two-dimensional electrostatics and determine the tunnel junction electric field. This electric field is used in an analytic expression to compute the tunnel current. The speed and power per...
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ژورنال
عنوان ژورنال: Journal of Instrumentation
سال: 2014
ISSN: 1748-0221
DOI: 10.1088/1748-0221/9/03/c03057