Physics-Based DC Compact Modeling of Schottky Barrier and Reconfigurable Field-Effect Transistors
نویسندگان
چکیده
A closed-form and physics-based compact model is presented for calculating the DC characteristics of Schottky barrier field-effect transistors dual gated reconfigurable transistors. The given calculates charge-carrier injection over barriers. This current separated into a field emission current, by charge carriers tunneling through barriers thermionic overcoming verification done comparing results to measurements TCAD simulations.
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ژورنال
عنوان ژورنال: IEEE Journal of the Electron Devices Society
سال: 2022
ISSN: ['2168-6734']
DOI: https://doi.org/10.1109/jeds.2021.3136981