Physics and Mitigation of Excess OFF-State Current in InGaAs Quantum-Well MOSFETs

InGaAs Quantum-Well MOSFETs for logic applications

InGaAs is a promising candidate as an n-type channel material for future CMOS due to its superior electron transport properties. Great progress has taken place recently in demonstrating InGaAs MOSFETs for this goal. Among possible InGaAs MOSFET architectures, the recessedgate design is an attractive option due to its scalability and simplicity. In this thesis, a novel selfaligned recessed-gate ...

High-Frequency Characteristics of InGaAs Quantum-Well MOSFETs

Electric-Field Induced F- Migration in Self-Aligned InGaAs MOSFETs and Mitigation

We report, for the first time, a prominent but fully reversible enhancement in transconductance after applying positive gate stress to self-aligned InGaAs MOSFETs. We attribute this to electric-field-induced migration of fluorine ions (F-) introduced during the RIE gate recess process. Fis known to passivate Si donors in InAlAs. In our device structure, an n-InAlAs ledge facilitates the link fr...

: metadiscourse in introduction sections of applied linguistics and physics research articles: exploring variation in frequency and type

abstract in written mode of language, metadiscourse markers are used commonly to help writers in general and academic writers in particular to produce coherent and professional texts. the purpose of the present study was to compare introduction sections of applied linguistics and physics articles regarding their use of interactive and interactional metadiscourse markers based on the model pro...

Heterostructure and Quantum Well Physics