Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study

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Photoluminescence from the nitrogen-perturbed above-bandgap states in dilute GaAs1−xNx alloys: A microphotoluminescence study

P. H. Tan,1,* X. D. Luo,2,5 Z. Y. Xu,1 Y. Zhang,3,† A. Mascarenhas,3 H. P. Xin,4 C. W. Tu,4 and W. K. Ge5 1State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, People’s Republic of China 2Jiangsu Provincial Key Lab of ASIC Design, Nantong University, Nantong, 226007, People’s Republic of China 3National Renewable ...

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ژورنال

عنوان ژورنال: Physical Review B

سال: 2006

ISSN: 1098-0121,1550-235X

DOI: 10.1103/physrevb.73.205205