Phosphites as precursors in atomic layer deposition thin film synthesis

We here demonstrate a new route for deposition of phosphorous based materials by atomic layer (ALD) using the phosphites Me3PO3 or Et3PO3 as precursors. These contain in oxidation state (III) and are open reduced phases ALD. have investigated their applicability synthesis LiPO AlPO characterized growth means situ quartz crystal microbalance. Phosphites good alternatives to established phosphate-based routes they high vapor pressure compatible with water coreactant during deposition. The deposited been XPS, x-ray fluorescence, ion beam analysis composition analysis, spectroscopic ellipsometry thickness, FTIR local structure.