Phenomenology of metal-semiconductor electrical barriers

Physical and electrical characterizations of metal-oxide-semiconductor capacitors

Electrical Discharge Machining of Ceramic/semiconductor/metal Nanocomposites

Electroconductive, homogeneous and dense ceramic/semiconductor/metal nanocomposites were obtained by hot press and subsequently machined by wire Electrical Discharge Machining (EDM). The addition of semiconductor and metal phases to a highperformance ceramic material produces nanocomposites which preserve the excellent mechanical properties of the ceramic/metal material while reaching the elect...

Nature of electrical contacts in a metal–molecule–semiconductor system

The effects of the top electrode fabrication method on the transport properties of Au–alkanedithiol– GaAs junctions are examined. We found that diodes made by evaporating Au on 1,8-octanedithiol monolayer behave similarly to Au–GaAs junctions without the molecular layer. The direct Au– GaAs contact dominates the electrical conduction in these evaporated devices despite the presence of the molec...

The Metal-Semiconductor Interface

Interfaces between metal and semiconductor may be found almost everywhere in contemporary electronics. Often the metal is there just to serve as a contact to p-n junctions in the semiconductor. At other times, the metal-semiconductor interface itself performs essential electronic functions. Considerable scientific interest has been devoted to this latter situation since early in the century, as...

Metal-catalyzed semiconductor nanowires

Semiconductor nanowires have become an important building block for nanotechnology. The growth of semiconductor nanowires using a metal catalyst via the vapor–liquid–solid (VLS) or vapor–solid–solid (VSS) mechanism has yielded growth directions in 〈1 1 1〉, 〈1 0 0〉 and 〈1 1 0〉 etc. In this paper, we summarize and discuss a broad range of factors that affect the growth direction of VLS or VSS gro...