Phase formation of cubic silicon carbide from reactive silicon–carbon multilayers

Abstract Silicon carbide layers were fabricated using self-propagating high-temperature synthesis of binary silicon-carbon based reactive multilayers. The silicon and carbon bilayers with two different bilayer thicknesses. They are deposited by magnetron sputtering in an alternating layer system a total thickness 1 μm. entire is annealed rapid thermal annealing at temperatures ranging from 500 to 1100 °C. From XRD analysis we could find that the formation phase was initiated 700 With increasing partially suppressed recrystallization due resulting lower diffusion into silicon. transformation process proceeds four-step process: densification/recrystallization, interdiffusion, nucleation transformation. this, it noted when compared low samples, delayed needs higher reaction initiation temperatures. Graphical abstract