Performance enhancement of triple material double gate TFET with heterojunction and heterodielectric

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

In GaAs/GaAsSb Heterojunction TFET

Tunnel FETs are a promising alternate to MOSFETs for low power design due to the ability to scale threshold voltage and hence supply voltage, without increase in OFF currents. However, they suffer from low ON currents. Demonstrated here is theenhancement in ION in arsenide–antimonide staggered-gap heterojunction (hetj) tunnel field-effect transistors (TFETs) by engineering the effective tunneli...

متن کامل

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor

In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details. The proposed device has been structured using Germanium for source regionand Silicon for channel and drain regions. Kane's band-to-band tunneling model hasbeen used to account for the amount of band-to...

متن کامل

An extensive electrostatic analysis of dual material gate all around tunnel FET (DMGAA-TFET)

In the proposed work an analytical model of a p-channel dual material gate all around tunnel FET (DMGAA-TFET) is presented and its performance is compared with the conventional GAA-TFET. The electrostatic potential profile of the model is obtained using 2-D Laplace’s solution in the cylindrical coordinate system. A quantitative study of the drain current has been carried out using electric fiel...

متن کامل

2d Threshold and Tran Conductance to Drain Current Ratio Modeling of Triple Material Double Gate (TMDG) Mosfet

VLSI technology is constantly evolving towards smaller line widths. In this paper analytical modeling for triple material double gate (TMDG) MOSFETs has been presented in the field of VLSI technology. An entire circuit is manufactured in a single piece of silicon. The level of integration of silicon technology as measured in terms of number of devices per IC. This leads to the concept of scalin...

متن کامل

Performance Analysis of Fully Depleted Dual Material Double Gate SOI MOSFET

Nowadays, the development of VLSI technology is mainly directed towards the miniaturization of semiconductor devices which in turn is heavily dependent on the advancement in the CMOS technology. The minimum dimension of a single device for present day technology is below sub-100 nm in channel length. As CMOS technology dimensions are being aggressively scaled down to the fundamental limits (suc...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Solid State Electronics Letters

سال: 2019

ISSN: 2589-2088

DOI: 10.1016/j.ssel.2019.10.001