Performance analysis of SOI MOSFET with rectangular recessed channel
نویسندگان
چکیده
منابع مشابه
Performance of Double Gate SOI MOSFET
The physical dimensions of bulk MOSFETs have been aggressively scaled down and these conventional devices will soon be experiencing limited improvements due to the scaling down. In order to continue performance improvements, new device architectures are needed. As the scaling of MOSFET into sub-100nm regime, SOI and DG-MOSFET are expect to replace traditional bulk MOSFET. These novel MOSFET dev...
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ژورنال
عنوان ژورنال: Advances in Natural Sciences: Nanoscience and Nanotechnology
سال: 2016
ISSN: 2043-6262
DOI: 10.1088/2043-6262/7/1/015010