Performance analysis of FinFET based inverter, NAND and NOR circuits at 10 NM,7 NM and 5 NM node technologies

Performance Analysis of FinFET Based Inverter circuit, NAND and NOR Gate at 22nm and 14nm Node technologies

The size of integrated devices such as PC, mobiles etc are reducing day by day with multiple operations, all of these is happening because of the scaling down the size of MOSFETs which is the main component in memory, processors and so on. As we scale down the MOSFETs to the nanometer regime the short channel effects arises which degrades the system performance and reliability. Here in this pap...

Sub - 50 nm P - Channel FinFET

High-performance PMOSFETs with sub-50–nm gate-length are reported. A self-aligned double-gate MOSFET structure (FinFET) is used to suppress the short-channel effects. This vertical double-gate SOI MOSFET features: 1) a transistor channel which is formed on the vertical surfaces of an ultrathin Si fin and controlled by gate electrodes formed on both sides of the fin; 2) two gates which are self-...

Two Flash Technologies Compared : NOR vs NAND

CD-SEM Technologies for 65-nm Process Node

OVERVIEW: Improved measurement repeatability of new CD-SEM systems for the 65-nm node has increased demand for ways to deal with pattern roughness and other new issues that have emerged as device feature sizes have continued to shrink. Hitachi Group’s newest generation CD-SEM developed for the 65-nm node and beyond, is now available. A range of elemental technologies are now under investigation...

25 nm Omega FinFET: Three-dimensional Process and Device Simulations

This Sentaurus simulation project provides a template setup for three-dimensional process simulation and device simulations of Omega FinFETs. The threedimensional process simulation is based on a particularly robust approach in which geometry-altering and dopant-related processing steps are executed sequentially in two separate groups. The Sentaurus Workbench template project also performs 3D q...