Peak thermoelectric power factor of holey silicon films
نویسندگان
چکیده
منابع مشابه
Holey silicon as an efficient thermoelectric material.
This work investigated the thermoelectric properties of thin silicon membranes that have been decorated with high density of nanoscopic holes. These "holey silicon" (HS) structures were fabricated by either nanosphere or block-copolymer lithography, both of which are scalable for practical device application. By reducing the pitch of the hexagonal holey pattern down to 55 nm with 35% porosity, ...
متن کاملSupporting Information: Holey Silicon as efficient thermoelectric material
1. Holey Silicon fabrication The HS ribbons used for transport measurements are patterned by optical lithography and then released from SOI substrate (Soitec Inc.) by hydrofluoric acid vapor etching. The SOI wafer consists 100 nm device layer (<100>, 14-22 Ω·cm, phosphorus doped) with 200 nm buried oxide layer. Holey structure is fabricated by DRIE through thin chromium mask (~5 nm) converted f...
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The thermoelectric performance of materials is determined by the figure of merit ZT=σS2/(κe+κl), where σ is the electrical conductivity, S is the Seebeck coefficient and κe and κl are the electronic and lattice contributions to the thermal conductivity, respectively. The interrelation between these quantities has traditionally kept ZT low, around unity. Nanomaterials have recently attracted sig...
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Silicon nanowires (NWs) of small diameters have attracted significant attention as efficient thermoelectric materials since the work of Hicks and Dresselhaus [1], who pointed out that low dimensionality can be beneficial to the Seebeck coefficient. The recent results of Boukai et al. [2], and Hochbaum et al. [3] showed that it is indeed possible to achieve ZT~0.5 at room temperature in Si NWs o...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2020
ISSN: 0021-8979,1089-7550
DOI: 10.1063/5.0010254