Pattern formation in semiconductors

Irradiation with Neutrons and Formation of Simple Radiation Defects in Semiconductors

In this research, cobalt and nickel sulfide nanoparticles (NPs) were grown on AlMCM-41 matrix by using ion exchange method. The prepared samples were irradiated by thermalized neutron that emitted from Am-Be source up to fluencies (7.9+E9n/cm2). After that, X-ray diffraction (XRD), UV-Vis spectroscopy, Fourier transform...

Pattern Competition in the Photorefractive Semiconductors

We analytically study the photorefractive Gunn e'ect in n-GaAs subjected to two external laser beams which form a moving interference pattern (MIP) in the semiconductor. When the intensity of the spatially independent part of the MIP, denoted by I0, is small, the system has a periodic domain train (PDT), consistent with the results of linear stability analysis. When I0 is su2ciently large, the ...

Pattern formation in semiconductors under the influence of time-delayed feedback control and noise

We review stabilization of deterministic chaotic as well as noise-induced spatio-temporal patterns in spatially extended nonlinear systems by time-delayed feedback control. Different control schemes, e.g., a diagonal control matrix, or global control, or combinations of both, are compared. Specifically, we use two models of nonlinear charge transport in semiconductor nanostructures which are of...

Pattern Formation in Electric

Self-Organized Formation of Fractal and Regular Pores in Semiconductors⋆

Electrochemical etching of semiconductors, beside technical applications, provides an interesting experimental setup for self-organized structure formation capable of regular, diameter-modulated, and branching pores. The underlying dynamical processes governing current transfer and structure formation are described by the Current-Burst-Model: all dissolution processes are assumed to occur inhom...