P-Type SiC Layers Formed by VLS Induced Selective Epitaxial Growth

Structural studies of epitaxial graphene formed on SiC{0001} surfaces

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Step-flow growth of nanolaminate Ti3SiC2 epitaxial layers on 4H-SiC(0 0 0 1)

Characterization of Deep Levels in n-type and Semi-Insulating 4H-SiC Epitaxial Layers by Thermally Stimulated Current Spectroscopy

GaN epitaxial layers grown on WI-SIC by the sublimation sandwich technique

We report on the structural and optical properties of GaN epitaxial layers grown on GH-Sic. We employed the sublimation sandwich method to grow single crystal layers at high growth rates with free carrier concentrations of 2 X 1Oi7 cmw3. Very narrow x-ray diffraction peaks of the GaN (0002) plane are obtained indicating the high quality of this system. These tidings are directly reflected in th...

Epitaxial Growth and Characterization of SiC for High Power Devices

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