Oxide/InAs(001) interface passivation with fluorine
نویسندگان
چکیده
It is shown that fluorine-containing anodic layers on the n-InAs(001) surface, in contrast to fluorine-free layers, form an interface with unpinned Fermi level, density of states which near midgap about 10 11 eV -1 · cm -2 (78 K ). The study chemical composition showed decrease associated formation indium and arsenic oxyfluorides interface. Keywords: InAs, MIS structure, fluorine, layer, states.
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ژورنال
عنوان ژورنال: Pis?ma v Žurnal tehni?eskoj fiziki
سال: 2023
ISSN: ['1726-7471', '0320-0116']
DOI: https://doi.org/10.21883/tpl.2023.03.55672.19413